1n5348b thru 1n5388b glass passivated junction silicon zener diode voltage - 11 to 200 volts power - 5.0 watts features l low profile package l built - in strain relief l glass passivated junction l low inductance l typical i d less than 1 a above 13v l high temperature soldering : 260 /10 seconds at terminals l plastic package has underwriters laboratory flammability classification 94v - o mechanical data case: jedec do - 201ae molded plastic over passivated junction terminals: solder plated, solderable per m il - std - 750, method 2026 standard packaging: 52mm tape weight: 0.04 ounce, 1.1 gram maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. symbol value units dc power dissipation @ t l =75 , measure at zero lead length(fig. 1) derate above 75 (note 1) p d 5.0 40.0 watts mw/ peak forward surge current 8.3ms single half sine - wave superimposed on rated load(jedec method) (note 1,2) i fsm see fig. 5 amps operating junction and storage temperature range t j , t stg - 55 to +150 notes: 1. mounted on 8.0mm 2 copper pads to each terminal. 2. 8.3ms single half sine - wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum. do - 201ae
1n5348b thru 1n5388b electrical characteristics (t a =25 unless other wise noted, v f =1.2 max @ i f =1a for all types. maximum zener impedance max reverse leakage current type no. (note 1.) nominal zener voltage vz @ i zt volts (note 2.) test current i zt ma z zt @ i zt ohms (note 2.) z zk @ i zk = 1 ma ohms (note 2.) i r a v r volts max surge current ir amps (note 3.) max voltage regulation vz, volts (note 4.) maximum regulator current i zm ma (note 5.) 1n5348b 1n5349b 1n5350b 1n5351b 11 12 13 14 125 100 100 100 2.5 2.5 2.5 2.5 125 125 100 75 5 2 1 1 8.4 9.1 9.9 10.6 8 7.5 7 6.7 0.25 0.25 0.25 0.25 430 395 365 340 1n5352b 1n5353b 1n5354b 1n5355b 1n5356b 15 16 17 18 19 75 75 70 65 65 2.5 2.5 2.5 2.5 3 75 75 75 75 75 1 1 0.5 0.5 0.5 11.5 12.2 12.9 13.7 14.4 6.3 6 5.8 5.5 5.3 0.25 0.3 0.35 0.4 0.4 315 295 280 265 250 1n5357b 1n5358b 1n5359b 1n5360b 1n5361b 20 22 24 25 27 65 50 50 50 50 3 3.5 3.5 4 5 75 75 100 110 120 0.5 0.5 0.5 0.5 0.5 15.2 16.7 18.2 19 20.6 5.1 4.7 4.4 4.3 4.1 0.4 0.45 0.55 0.55 0.6 237 216 198 190 176 1n5362b 1n5363b 1n5364b 1n5365b 1n5366b 28 30 33 36 39 50 40 40 30 30 6 8 10 11 14 130 140 150 160 170 0.5 0.5 0.5 0.5 0.5 21.2 22.8 25.1 27.4 29.7 3.9 3.7 3.5 3.3 3.1 0.6 0.6 0.6 0.65 0.65 170 158 144 132 122 1n5367b 1n5368b 1n5369b 1n5370b 1n5371b 43 47 51 56 60 30 25 25 20 20 20 25 27 35 40 190 210 230 280 350 0.5 0.5 0.5 0.5 0.5 32.7 35.8 38.8 42.6 45.5 2.8 2.7 2.5 2.3 2.2 0.7 0.8 0.9 1 1.2 110 100 93 86 79 1N5372B 1n5373b 1n5374b 1n5375b 1n5376b 62 68 75 82 87 20 20 20 15 15 42 44 45 65 75 400 500 620 720 760 0.5 0.5 0.5 0.5 0.5 47.1 51.7 56 62.2 66 2.1 2 1.9 1.8 1.7 1.35 1.5 1.6 1.8 2 76 70 63 58 54.5 1n5377b 1n5378b 1n5379b 1n5380b 1n5381b 91 100 110 120 130 15 12 12 10 10 75 90 125 170 190 760 800 1000 1150 1250 0.5 0.5 0.5 0.5 0.5 69.2 76 83.6 91.2 98.8 1.6 1.5 1.4 1.3 1.2 2.2 2.5 2.5 2.5 2.5 52.5 47 .5 43 39.5 36.6 1n5382b 1n5383b 1n5384b 1n5385b 1n5386b 1n5387b 140 150 160 170 180 190 8 8 8 8 5 5 230 330 35 0 380 430 450 1500 1500 1650 1750 1750 1850 0.5 0.5 0.5 0.5 0.5 0.5 106 114 122 129 137 144 1.2 1.1 1.1 1 1 0.9 2.5 3 3 3 4 5 34 31.6 29.4 28 26 .4 25 1n5388b 200 5 480 1850 0.5 152 0.9 5 23.6 note: 1. tolerance and voltage designation - the jedec type numbers shown indicate a tolerance of 10% with guaranteed limits on only vz, i r , i r , and v f as shown in the electrical characteristics table. units with guaranteed limits on all seven parameters are indicated by suffix ?b? for 5% tolerance. 2. zener voltage (vz) and impedance (z zt & z zk ) - test conditions for zener voltage and impedance are as follows; iz is applied 40 10 ms prior to re ading. mounting contacts are located from the inside edge of mounting clips to the body of the diode.(t a =25 ).
3. surge current (ir) - surge current is specified as the maximum allowable peak, non - recurrent square - wav e current with a pulse width, pw, of 8.3 ms. the data given in figure 5 may be used to find the maximum surge current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on logarithmic paper. examples o f this, using the 6.8v and 200v zeners, are shown in figure 6. mounting contact located as specified in note 3. (t a =25 ). 4. voltage regulation ( vz) - test conditions for voltage regulation are as follows: vz measurements are made at 10% and then at 50% of the iz max value listed in the electrical characteristics table. the test curre nts are the same for the 5% and 10% tolerance devices. the test current time druation for each vz measurement is 40 10 ms. (t a =25 ). mounting contact located as specified in note2. 5. maximum regulator current (i zm ) - the maximum current shown is based on the maximum voltage of a 5% type unit. therefore, it applies only to the b - suffix device. the actual i zm for any device may not exceed the value of 5 watts divided by the actual vz of the device. t l =75 at ma ximum from the device body. rating and characteristics curves 1n5348b thru 1n5388b temperature coefficients fig. 1 - power temperature derating curve fig. 2 - temperature coefficient range for units 6 to 220 volts fig. 3 - typical thermal response
fig. 4 - typical thermal resistance fig. 5 - maximum non - repetitive surge current versus nominal zener v oltage( see note 3 ) rating and characteristics curves 1n5348b thru 1n5388b fig. 6 - peak surge current versus pulse fig. 7 - zener voltage versus zener current width(see note 3) v z =6.8 thru 10 volts fig. 8 - zener voltage versus zener current fig. 9 - zener voltage versus zener current v z = 11 thru 75 volts v z = 82 thru 200 volts
applicatio n note: since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended : lead temperature, t l , should be determined from: t l = la p d + t a la is the lead - to - ambient thermal resistance ( /w) and p d is the power dissipation. junction temperature, t j , may be found from: t j = t l + t jl t jl is the increase in junction temperature above the lead temperature and may be f ound from figure 3 for a train of power pulses or from figure 4 for dc power. t jl = jl p d for worst - case design, using expected limits of iz, limits of p d and the extremes of t j ( t j ) may be estimated. changes in voltage, vz, can then be found from: v = vz t j vz , the zener voltage temperature coefficient, is fount from figures 2. under high power - pulse operation, the zener voltage will vary with time and may also be affected significantly be the zener resistance. for best regulation, keep current e xcursions as low as possible. data of figure 3 should not be used to compute surge capability. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temper atures to be extremely high in small spots resulting in device degradation should the limits of figure. 5 be exceeded.
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